PART |
Description |
Maker |
CS2907 |
(CS2907 / CS2917) 50mA F to V Converter
|
Cherry Semiconductor
|
2N1025 2N2176 2N1475 2N1027 2N1474 2N329B 2N1654 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-5 5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | TO-5 Silicon Transistors
|
Semitronics
|
2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662 |
High-Frequency Amplifier Transistor(11V 50mA 3.2GHz) High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz) High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz) Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM[Rohm]
|
BY329-1700S |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes Damper diode fast, high-voltage
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
TC1072 TC1072-2.5VCH TC1072-3.0VCH TC1072-2.7VCH T |
50mA CMOS LDO WITH SHUTDOWN / ERROR OUTPUT AND VREF BYPASS 50mA CMOS LDO WITH SHUTDOWN, ERROR OUTPUT AND VREF BYPASS 50mA的CMOS LDO稳压器具有关断,错误输出和Vref旁路
|
TelCom Semiconductor, Inc.
|
2SA872AE 2SA872E |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 50mA的一(c)|92 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 50MA I(C) | TO-92 晶体管|晶体管|进步党| 90V的五(巴西)总裁| 50mA的一(c)|2
|
KEC Holdings Electro Switch Corp.
|
N2T-CSS-X1 N2B-CSS N2B-CSS-T1 N2B-CSS-T2 N2B-CSS-T |
SPNovaLED InGaN : 50mA
|
DOMINANT[DOMINANT Semiconductors]
|
TSS-TC-2401 |
RATING:DC 12V 50mA
|
Suntan Capacitors
|
HM514800LJP-7 HM514800LJP-10 HM514800LZP-10 HM5148 |
70ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory 100ns; V(cc): -1 to 7V; 50mA; 1W; 524,288-word x 8-bit dynamic random access memory
|
Hitachi Semiconductor
|
M54513FP M54513P M54513P11 |
8-UNIT 50mA TRANSISTOR ARRAY
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Sem...
|
FODK23P90Y0/0500 |
PROXIMITY SENSOR-PHOTOELECTRIC, 50mA
|
Lumex, Inc.
|